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HS Code and Harmonized Tariff Schedule of Canada
HS NoSS Description of Goods Unit of Meas.  MFN Tariff Applicable Preferential Tariffs
8536.50.2000Electrical apparatus for switching or protecting electrical circuits, or for making connections to or in electrical circuits (for example, switches, relays, fuses, surge suppressors, plugs, sockets, lamp-holders and other connectors, junction boxes), for a voltage not exceeding 1,000 volts; connectors for optical fibres, optical fibre bundles or cables. - Other switches - Electro-mechanical snap-action switches for a current not exceeding 11 A; Electronic switches, including temperature-protected electronic switches, consisting of a transistor and a logic chip (chip-on-chip technology); Electronic AC switches consisting of optically-coupled input and output circuits (insulated thyristor AC switches)NMBFreeCCCT, LDCT
8542.31.0011Electronic integrated circuits. - Electronic integrated circuits: - Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), other than memory: - Microprocessors, having an internal data bus of less then 32 bitsNMBFreeCCCT, LDCT
8542.31.0012Electronic integrated circuits. - Electronic integrated circuits: - Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), other than memory: - Microprocessors, having an internal data bus of 32 bits or moreNMBFreeCCCT, LDCT
8542.32.0021Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), volatile memory: - Dynamic read-write random access (DRAM), not over 1 megabitNMBFreeCCCT, LDCT
8542.32.0022Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), volatile memory: - Dynamic read-write random access (DRAM), over 1 megabitNMBFreeCCCT, LDCT
8542.32.0023Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), volatile memory: - Static read-write random access (SRAM), not over 256 kilobitsNMBFreeCCCT, LDCT
8542.32.0024Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), volatile memory: - Static read-write random access (SRAM), over 256 kilobitsNMBFreeCCCT, LDCT
8542.32.0031Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), non-volatile memory: - Electrically erasable programmable read only memory (EEPROM)NMBFreeCCCT, LDCT
8542.32.0039Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon metal oxide semiconductors (MOS technology), non-volatile memory: - OtherNMBFreeCCCT, LDCT
8542.32.0041Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon circuits obtained by bipolar technology: - Static read-write random access memory (SRAM)NMBFreeCCCT, LDCT
8542.32.0049Electronic integrated circuits. - Electronic integrated circuits: - Memories - Monolithic integrated circuits, digital, for mounted silicon circuits obtained by bipolar technology: - OtherNMBFreeCCCT, LDCT
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